Silicon-based Schottky barrier infrared optical detector

US7358585B2 · kind B2 · utility

Assignee

• SiOptical, Inc. · US

Inventors

• Vipulkumar Patel · Emmaus, US
• Margaret Ghiron · Allentown, US
• Prakash Gothoskar · Allentown, US
• Robert Keith Montgomery · Easton, US
• Soham Pathak · Allentown, US
• David Piede · Allentown, US
• Kalpendu Shastri · Orefield, US
• Katherine A. Yanushefski · Emmaus, US

Key dates

• Filing date: Nov 17, 2004
• Grant date: Apr 15, 2008
• Expiry date: May 18, 2025

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A silicon-based IR photodetector is formed within a silicon-on-insulator (SOI) structure by placing a metallic strip (preferably, a silicide) over a portion of an optical waveguide formed within a planar silicon surface layer (i.e., “planar SOI layer”) of the SOI structure, the planar SOI layer comprising a thickness of less than one micron. Room temperature operation of the photodetector is accomplished as a result of the relatively low dark current associated with the SOI-based structure and the ability to use a relatively small surface area silicide strip to collect the photocurrent. The planar SOI layer may be doped, and the geometry of the silicide strip may be modified, as desired, to achieve improved results over prior art silicon-based photodetectors.