Magnetic spin valve with a magnetoelectric element
US7358846B2 · kind B2 · utility
1Cited by
4References
13Claims
0Family size
Inventor
Key dates
| Filing date | Jun 1, 2006 |
| Grant date | Apr 15, 2008 |
| Priority date | — |
| Expiry date | Sep 17, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides systems and method utilizing magnetoelectric materials such as Cr2O3 to construct tunneling magnetoresistence and/or giant magnetoresistence structures for memory and/or logical circuitry. An applied voltage differential induces a magnetic moment in the magnetoelectric material, which in turn tunes an exchange field between it and one or more adjacent ferromagnetic layers. The resulting magnetoresistence of the device may be measured. Devices in accordance with the present invention may be utilized for MRAM read heads, memory storage cells and/or logical circuitry such as XOR or NXOR devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.