Red light laser
US7359421B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2007 |
| Grant date | Apr 15, 2008 |
| Priority date | — |
| Expiry date | Mar 7, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/423
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor material vertical cavity surface emitting laser for emitting narrow linewidth light comprising a compound semiconductor material substrate and pairs of semiconductor material layers in a first mirror structure on the substrate of a first conductivity type each differing from that other in at least one constituent concentration and each first mirror pair separated from that one remaining by a first mirror spacer layer with a graded constituent concentration. An active region on the first mirror structure has plural quantum well structures separated by at least one active region spacer layer and there is a second mirror structure on the active region similar to the first but of a second conductivity type. A pair of electrical interconnections is separated by said substrate, said first mirror structure, said active region and said second mirror structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.