Distributed feedback laser diode
US7359423B2 · kind B2 · utility
2Cited by
10References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 25, 2005 |
| Grant date | Apr 15, 2008 |
| Priority date | — |
| Expiry date | Sep 15, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/124
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser includes an active layer on an n-type InP substrate. A diffraction grating and a p-type InP cladding layer are above the active layer. The diffraction grating has at least one phase shift portion. Facets of the distributed feedback laser each have thereon an antireflective film having a reflectance of 3% or less. The diffraction grating does not extend into end regions of the distributed feedback laser, each end region extending 1 μm-20 μm from a respective one of the facets toward an opposite end in a waveguide direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.