Molecular-junction-nanowire-crossbar-based neural network
US7359888B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 31, 2003 |
| Grant date | Apr 15, 2008 |
| Priority date | — |
| Expiry date | Jan 24, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for configuring nanoscale neural network circuits using molecular-junction-nanowire crossbars, and nanoscale neural networks produced by this method. Summing of weighted inputs within a neural-network node is implemented using variable-resistance resistors selectively configured at molecular-junction-nanowire-crossbar junctions. Thresholding functions for neural network nodes are implemented using pFET and nFET components selectively configured at molecular-junction-nanowire-crossbar junctions to provide an inverter. The output of one level of neural network nodes is directed, through selectively configured connections, to the resistor elements of a second level of neural network nodes via circuits created in the molecular-junction-nanowire crossbar. An arbitrary number of inputs, outputs, neural network node levels, nodes, weighting functions, and thresholding functions for any desired neural network are readily obtained by the methods of the present invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.