Silicon inertial sensors formed using MEMS
US7360422B2 · kind B2 · utility
19Cited by
21References
12Claims
0Family size
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Key dates
| Filing date | Sep 30, 2005 |
| Grant date | Apr 22, 2008 |
| Priority date | — |
| Expiry date | Nov 17, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49007
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A MEMS silicon inertial sensor formed of a mass that is supported and constrained to vibrate in only specified ways. The sensors can be separately optimized from the support, to adjust the sensitivity separate from the bandwidth. The sensor can sense three dimensionally, or can only sense in a single plane. Vibration cancellation may be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.