High impedance thin film for strain gauge applications
US7360430B2 · kind B2 · utility
1Cited by
1References
11Claims
0Family size
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Key dates
| Filing date | Oct 26, 2006 |
| Grant date | Apr 22, 2008 |
| Priority date | — |
| Expiry date | Oct 26, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C17/0658
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A resistive thin film (1) made of grains (3) of conductive material having an average size, in a dielectric medium (2) is characterized by the total thickness of the film (1) being between 3 and ten times the average size of the grains (3). The film (1) is used to make a cell of a pressure sensor and the cell is included in a shell of a pressure sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.