Growing lower defect semiconductor crystals on highly lattice-mismatched substrates
US7361522B2 · kind B2 · utility
4Cited by
1References
7Claims
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Key dates
| Filing date | Mar 28, 2006 |
| Grant date | Apr 22, 2008 |
| Priority date | — |
| Expiry date | Mar 28, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/932
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heterosystem of two different materials, mismatched in terms of lattice constant or symmetry, may be formed with reduced defects by using a two step approach proposed in this invention. Nanowires are first grown on a semiconductor substrate, and then a thin film of the disparate crystallographically inconsistent material is grown from the nanowires through a two dimensional growth mode. The nanowire material may better match crystallographically to both the substrate and the grown film, or is simply the same as the grown film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.