Method of manufacturing semiconductor device
US7361562B2 · kind B2 · utility
4Cited by
5References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 27, 2004 |
| Grant date | Apr 22, 2008 |
| Priority date | — |
| Expiry date | Dec 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of manufacturing a semiconductor device capable of forming a thin high-quality gate oxide layer by suppressing occurrence of recoiled oxygen due to ion implanting. The method of manufacturing a semiconductor device includes steps of: removing an oxide layer from a semiconductor substrate; forming a well region in the substrate by performing a first ion implanting process; removing a native oxide layer from the substrate; adjusting a threshold voltage by performing a second ion implanting process on the substrate; and forming a gate oxide layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.