Semiconductor apparatus and method of manufacturing the same
US7361952B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2005 |
| Grant date | Apr 22, 2008 |
| Priority date | — |
| Expiry date | May 26, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A semiconductor apparatus includes a semiconductor substrate of a first conductivity type, a base region of a second conductivity type formed on a principal surface of the semiconductor substrate, a trench formed in a periphery of the base region, and an endless source region of the first conductivity type formed on a surface of the base region along the trench. In this semiconductor apparatus, the principal planes on side surfaces of the trench are composed of planes [100] and [110]. The interior angle of intersection of adjacent side surfaces of the trench is 135°. A minimum distance between the base region and the plane [110] facing each other through the source region is shorter than a minimum distance between the base region and the plane [100] facing each other through the source region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.