Additive printed mask process and structures produced thereby

US7365022B2 · kind B2 · utility

Assignee

• Palo Alto Research Center Incorporated · US

Inventors

• William S. Wong · Redwood City, US
• Scott Limb · Palo Alto, US
• Michael L. Chabinyc · Mountain View, US
• Beverly Russo · Sunnyvale, US
• Rene A. Lujan · Sunnyvale, US

Key dates

• Filing date: Jan 20, 2006
• Grant date: Apr 29, 2008
• Expiry date: Mar 14, 2026

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/942
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A digital lithographic process first deposits a mask layer comprised of print patterned mask features. The print patterned mask features define gaps into which a target material may be deposited, preferably through a digital lithographic process. The target material is cured or hardened, if necessary, into target features. The mask layer is then selectively removed. The remaining target features may then be used as exposure or etch masks, physical structures such as fluid containment elements, etc. Fine feature widths, narrower the minimum width of the print patterned mask features, may be obtained while realizing the benefits of digital lithography in the manufacturing process.