Thin film transistor substrate of a horizontal electric field type
US7365365B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 15, 2006 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Oct 14, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136259
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of darkening a defective pixel including a short between a source electrode and a drain electrode in a thin film transistor substrate includes forming a gate line and a data line on a substrate to define a pixel region; forming a thin film transistor at a crossing of the gate line and the data line, the thin film transistor having a gate electrode, a source electrode and a drain electrode; forming a pixel electrode and a common electrode in the pixel region; forming a common line provided in parallel to the gate line and connected to the common electrode; forming an extended part of the drain electrode in parallel to the gate line; and cutting the extended part along a cutting line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.