Surface-emitting type wafer and method for manufacturing the same, and burn-in method for surface-emitting type wafers
US7365368B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2005 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Dec 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/10
Abstract
To simplify the burn-in process and reduce its cost for a surface-emitting type wafer and its manufacturing method, and for a burn-in method for a surface-emitting type wafer. A surface-emitting type wafer includes a substrate 10 and a plurality of surface-emitting type elements 1 formed above the substrate 10. Each of the surface-emitting type elements 1 includes a light emitting element section 20, first and second electrodes 30, 32 for driving the light emitting element section 20, and a rectification element section 40. The rectification element section 40 is connected in parallel between the first and second electrodes 30, 32, and has a rectification action in a reverse direction with respect to the light emitting element section 20. The plurality of surface-emitting type elements 1 are connected in series in a direction in which forward directions of the respective light emitting element sections 20 coincide with one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.