Semiconductor device and fabrication method thereof
US7365440B2 · kind B2 · utility
4Cited by
1References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 28, 2005 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Dec 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a second insulating film formed on a second surface of a semiconductor substrate whose first surface has been formed with a first insulating film and an electrode pad, and an opening is made in a portion of the second insulating film directly below the electrode pad. By using the second insulating film as a mask, a through hole is formed in the semiconductor substrate in such a manner that the through hole recedes from an opening edge of the first insulating film. A third insulating film is formed only on the inner wall of the through hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.