Apparatus and method for charge pump slew rate control
US7365585B2 · kind B2 · utility
13Cited by
31References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2006 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Oct 13, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K5/01
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An apparatus and method for improving memory cell reliability is disclosed. The slew rate is reduced in an applied voltage signal used to program a memory cell when Fowler-Nordheim (FN) tunneling injection is detected. The applied programming signal is provided by a charge pump that is preferably a regulated charge pump. The charge pump is selectively controlled by a slew rate control circuit when FN tunneling injection is detected by a voltage level detection circuit at a predetermined threshold voltage level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.