Patent · US Expired

Optimizing mirror reflectivity for reducing spontaneous emissions in photodiodes

US7366217B2 · kind B2 · utility

9Cited by
6References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 30, 2004
Grant dateApr 29, 2008
Priority date
Expiry dateDec 30, 2024

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S2301/02
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.