Critical current density in Nb3Sn superconducting wire
US7368021B2 · kind B2 · utility
3Cited by
7References
13Claims
0Family size
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Key dates
| Filing date | Feb 22, 2005 |
| Grant date | May 6, 2008 |
| Priority date | — |
| Expiry date | Jul 29, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49117
Abstract
Critical current densities of internal tin wire to the range of 3000 A/mm2 at temperature of 4.2 K and in magnetic field 12 T are achieved by controlling the following parameters in a distributed barrier subelement design: wt % Sn in bronze; atomic Nb:Sn; local area ratio; reactable barrier; barrier thickness relative to the filament thickness; additions of a dopant such as Ti or Ta to the Nb3Sn; and the design for restacking and wire reduction to control the maximum filament diameter at the subsequent heat reaction stage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.