Method of producing an N-type diamond with high electrical conductivity
US7368317B2 · kind B2 · utility
1Cited by
3References
10Claims
0Family size
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Key dates
| Filing date | Jun 3, 2005 |
| Grant date | May 6, 2008 |
| Priority date | — |
| Expiry date | Apr 6, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/914
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a method of producing an n-type diamond. The inventive method comprises an n-doping stage during which a donor species is vacuum diffused in a diamond that was initially doped with an acceptor, in order to form donor groups containing the donor species, at a temperature that is less than or equal to the dissociation temperature of the complexes formed between the acceptor and the donor species.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.