Method for selective deposition of a thin self-assembled monolayer
US7368377B2 · kind B2 · utility
14Cited by
4References
22Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Dec 7, 2005 |
| Grant date | May 6, 2008 |
| Priority date | — |
| Expiry date | Apr 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for selective deposition of self-assembled monolayers to the surface of a substrate for use as a diffusion barrier layer in interconnect structures is provided comprising the steps of depositing a first self-assembled monolayer to said surface, depositing a second self-assembled monolayer to the non-covered parts of said surface and subsequently heating said substrate to remove the first self-assembled monolayer. The method of selective deposition of self-assembled monolayers is applied for the use as diffusion barrier layers in a (dual) damascene structure for integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.