Heterojunction bipolar transistor and method to make a heterojunction bipolar transistor
US7368764B1 · kind B1 · utility
2Cited by
16References
19Claims
0Family size
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Key dates
| Filing date | Apr 18, 2005 |
| Grant date | May 6, 2008 |
| Priority date | — |
| Expiry date | Sep 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/821
Abstract
A heterojunction bipolar transistor and a method of making a heterojunction bipolar transistor. The heterojunction bipolar transistor includes: a regrown emitter region; an intrinsic base region forming a junction with the regrown emitter region; and an extrinsic base region separated from the regrown emitter region. The thickness of the extrinsic base region is greater than the thickness of the intrinsic base region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.