Active pixel having reduced dark current in a CMOS image sensor
US7368772B2 · kind B2 · utility
5Cited by
22References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2003 |
| Grant date | May 6, 2008 |
| Priority date | — |
| Expiry date | Dec 18, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
The active pixel includes a photodiode, a transfer gate, and a reset transistor. The photodiode is substantially covered with an overlying structure, thus protecting the entire surface of the photodiode from damage. This substantially eliminates potential leakage current sources, which result in dark current. In one embodiment, the photodiode is covered by a FOX region in combination with the transfer gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.