Power transistor control device
US7368972B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 26, 2005 |
| Grant date | May 6, 2008 |
| Priority date | — |
| Expiry date | Sep 29, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/04123
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The invention relates to a gate control device 10 of a power semiconductor component 11 of the IGBT type. A ramp generator circuit 20 delivers a reference gate voltage at its output. A stage for the current amplification of the said reference voltage delivers a gate current to the IGBT component, this amplification stage comprising an ignition circuit 30 and a rapid extinction circuit 40. A slow extinction circuit 50 is connected between the gate G of the IGBT component and the output of the generator circuit. A circuit 60 for the detection of a collector-emitter voltage of the component is connected to a feedback circuit 70 delivering a feedback signal 71 that acts on the rapid extinction circuit 40 and on the output 22 of the generator circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.