Broad-band optical semiconductor device and a method for manufacturing the same
US7369588B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2006 |
| Grant date | May 6, 2008 |
| Priority date | — |
| Expiry date | Feb 3, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/173
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is an optical semiconductor device that provides an optical gain or optical loss depending on application of electric current. The optical semiconductor device comprises: a lower clad layer; an active layer disposed on the lower clad layer, the active layer generating optical gain or optical loss depending on injection of carriers; an upper clad layer disposed on the active layer, the upper clad layer serving to trap light in the active layer in cooperation with the lower clad layer; and a temperature control part for controlling the temperature distribution of the active layer along the light propagation axis in such a manner that temperature of the active layer varies depending on positions in the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.