Semiconductor laser
US7369594B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2006 |
| Grant date | May 6, 2008 |
| Priority date | — |
| Expiry date | Jun 23, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32325
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser of effective index type which has a lower cladding layer, an active layer, and an upper cladding layer, which are sequentially arranged upward, with said upper cladding layer being formed into the stripe ridge structure, wherein the upper cladding layer forming the foot and slope of said stripe ridge structure is covered with a buried layer of layered structure made up of two or more low refractive index layers to prevent absorption of the laser light, with a light-absorbing layer interposed between them which absorbs the laser light of oscillatory wavelength. This semiconductor laser prevents kinks due to higher-order modes, and hence it realizes a high level of output.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.