Method for resetting pinned layer magnetization in a magnetoresistive sensor
US7370404B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2004 |
| Grant date | May 13, 2008 |
| Priority date | — |
| Expiry date | Aug 23, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49044
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A spin valve sensor in a read head has a spacer layer which is located between a self-pinned AP pinned layer structure and a free layer structure. The free layer structure is longitudinally stabilized by first and second hard bias layers which abut first and second side surfaces of the spin valve sensor. The AP pinned layer structure has an antiparallel coupling layer (APC) which is located between first and second AP pinned layers (AP1) and (AP2). The invention employs a resetting process for setting of the magnetic moments of the AP pinned layers by applying a field at an acute angle to the head surface in a plane parallel to the major planes of the layers of the sensor. The resetting process sets a proper polarity of each AP pinned layer, which polarity conforms to processing circuitry employed with the spin valve sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.