Nitride semiconductor device and method for fabricating the same that minimizes cracking
US7371594B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 2005 |
| Grant date | May 13, 2008 |
| Priority date | — |
| Expiry date | Feb 23, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a nitride semiconductor device and a method for fabricating the same. According to the present invention, there is an advantage in that trenches isolating respective nitride semiconductor unit devices from one another are filled with crack-inhibiting walls to remove voids, thereby minimizing cracks or damage that may occur in the nitride semiconductor unit devices during a laser lift-off process.In addition, there is an advantage in that the devices are bonded through a bonding-reinforcing plate or the crack-inhibiting walls to a carrier substrate with a bonding member coated thereon, thereby maintaining a strong bonding force to the carrier substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.