Wafer bonding method
US7371661B2 · kind B2 · utility
4Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 12, 2006 |
| Grant date | May 13, 2008 |
| Priority date | — |
| Expiry date | Nov 4, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer bonding method, comprising steps of: coating a medium layer respectively on the surfaces of two wafers; removing impurities formed on the surface of each medium layer; laminating the two wafers while enabling the surface coated with the medium layer of one of the two wafers to face the surface coated with the medium layer of another wafer; and applying an ultra-sonic oscillation and a bonding pressure upon the laminated wafers for bonding the two wafers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.