Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh
US7372116B2 · kind B2 · utility
39Cited by
14References
28Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 16, 2004 |
| Grant date | May 13, 2008 |
| Priority date | — |
| Expiry date | Oct 11, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory cell for use in a magnetic random access memory array that uses the antiferromagnetic to ferromagnetic transition properties of FeRh to assist in the control of switching of the memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.