Method and apparatus for testing tunnel magnetoresistive effect element, manufacturing method of tunnel magnetoresistive effect element and tunnel magnetoresistive effect element
US7372282B2 · kind B2 · utility
9Cited by
4References
48Claims
0Family size
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Key dates
| Filing date | Mar 13, 2006 |
| Grant date | May 13, 2008 |
| Priority date | — |
| Expiry date | Mar 13, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/302
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for testing a TMR element includes a step of measuring a plurality of resistances of the TMR element by applying a plurality of voltages with different voltage values each other to the TMR element, respectively, a step of calculating a ratio of change in resistance from the measured plurality of resistances of the TMR element, and a step of evaluating the TMR element using the calculated ratio of change in resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.