Patent · US Expired

Method and apparatus for testing tunnel magnetoresistive effect element, manufacturing method of tunnel magnetoresistive effect element and tunnel magnetoresistive effect element

US7372282B2 · kind B2 · utility

9Cited by
4References
48Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 13, 2006
Grant dateMay 13, 2008
Priority date
Expiry dateMar 13, 2026

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01F41/302
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

A method for testing a TMR element includes a step of measuring a plurality of resistances of the TMR element by applying a plurality of voltages with different voltage values each other to the TMR element, respectively, a step of calculating a ratio of change in resistance from the measured plurality of resistances of the TMR element, and a step of evaluating the TMR element using the calculated ratio of change in resistance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.