Methods and memory structures using tunnel-junction device as control element
US7372714B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Jul 26, 2006 |
| Grant date | May 13, 2008 |
| Priority date | — |
| Expiry date | Jul 26, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory structure includes a memory storage element electrically coupled to a control element. The control element comprises a tunnel-junction device. The memory storage element may also comprise a tunnel-junction device. Methods for fusing a tunnel-junction device of a memory storage element without fusing a tunnel-junction device of an associated control element are disclosed. The memory storage element may have an effective cross-sectional area that is greater than an effective cross-sectional area of the control element. A reference element comprising a tunnel-junction device may be used with a current source to fuse a memory storage element without fusing a tunnel-junction device of an associated control element. Methods of making the memory structure and using it in electronic devices are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.