Magnetic memory device with moving magnetic domain walls
US7372757B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2006 |
| Grant date | May 13, 2008 |
| Priority date | — |
| Expiry date | Nov 9, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C19/0841
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device includes a plurality of first metal lines arranged in parallel on a substrate and including a plurality of magnetic domains with variable magnetization directions. A plurality of second metal lines is arranged on the substrate perpendicular to the first metal lines. The plurality of second metal lines each has a tunnel through which the plurality of first metal lines pass. First input units are connected to the plurality of first metal lines and supply a current to drag or move the plurality of magnetic domains. Second input units are connected to the plurality of second metal lines to supply a current for switching the magnetization directions of magnetic domains inside the tunnels. Sensing units are connected to the plurality of second metal lines for sensing an electromotive force caused by magnetic domain walls passing through the tunnels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.