MEMS pressure sensing device
US7373833B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2006 |
| Grant date | May 20, 2008 |
| Priority date | — |
| Expiry date | Aug 9, 2026 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0735
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A pressure sensing system formed in a monolithic semiconductor substrate. The pressure sensing system comprises a pressure sensing device formed on the monolithic semiconductor substrate. The pressure sensing device is adapted to be disposed in an environment for developing an electrical pressure signal corresponding to the pressure in the environment. The system includes driver circuitry formed in the monolithic semiconductor substrate. The driver circuitry is responsive to input electrical signal for generating an output pressure signal. A conductive interconnect structure formed in the monolithic semiconductor substrate to electrically connects the pressure sensing device to the driver circuitry such that electrical pressure signals developed by the pressure sensing device are provided as input electrical signals to the driver circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.