Semiconductor wafer cleaning agent and cleaning method
US7375066B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2001 |
| Grant date | May 20, 2008 |
| Priority date | — |
| Expiry date | Mar 19, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A semiconductor surface cleaning agent containing a compound the molecule of which has a nitrogen atom having an unshared electron pair and used for cleaning the surface of a semiconductor on which copper wiring is provided, and a method for cleaning the surface of a semiconductor characterized by treating the surface of a semiconductor on which copper wiring is provided with such a cleaning agent. The cleaning agent does not corrode the copper wiring (copper thin film) on the semiconductor and SiO2 of the interlayer insulating film, does not impair the flatness of the surface, and is effective in removing CuO and particles adhering to the surface of the Cu-CMP step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.