Ingan-based light-emitting diode chip and a method for the production thereof

US7375377B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Johannes Baur · Regensburg, DE
• Georg Brüderl · Burglengenfeld, DE
• Berthold Hahn · Hemau, DE
• Volker Harle · Hemau, DE
• Uwe Strauss · Bad Abbach, DE

Key dates

• Filing date: Jun 13, 2001
• Grant date: May 20, 2008
• Expiry date: Jun 13, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

A light-emitting diode chip (1), in which over a substrate (2), a series of epitaxial layers (3) with a radiation-emitting active structure (4) based on InGaN is disposed. Between the substrate (2) and the active structure (4), a buffer layer (20) is provided. The material or materials of the buffer layer (20) are selected such that their epitaxial surface (6) for the epitaxy of the active structure (4) is unstressed or slightly stressed at their epitaxial temperature. The active structure (4) has In-rich zones (5), disposed laterally side by side relative to the epitaxial plane, in which zones the In content is higher than in other regions of the active structure (4). A preferred method for producing the chip is disclosed.