Schottky barrier diode and integrated circuit using the same
US7375407B2 · kind B2 · utility
42Cited by
6References
11Claims
0Family size
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Key dates
| Filing date | Nov 14, 2005 |
| Grant date | May 20, 2008 |
| Priority date | — |
| Expiry date | Nov 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/60
Abstract
A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a substrate; and a high-resistance region formed in the first semiconductor layer and the second semiconductor layer and having higher resistance than the first semiconductor layer and the second semiconductor layer. A Schottky electrode and an ohmic electrode spaced from each other are formed on the second semiconductor layer in a portion surrounded with the high-resistance region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.