Terahertz radiation mixer
US7376403B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2005 |
| Grant date | May 20, 2008 |
| Priority date | — |
| Expiry date | Jul 30, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/824
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A terahertz radiation mixer comprises a heterodyned field-effect transistor (FET) having a high electron mobility heterostructure that provides a gatable two-dimensional electron gas in the channel region of the FET. The mixer can operate in either a broadband pinch-off mode or a narrowband resonant plasmon mode by changing a grating gate bias of the FET. The mixer can beat an RF signal frequency against a local oscillator frequency to generate an intermediate frequency difference signal in the microwave region. The mixer can have a low local oscillator power requirement and a large intermediate frequency bandwidth. The terahertz radiation mixer is particularly useful for terahertz applications requiring high resolution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.