Reduction of near field electro-magnetic scattering using high impedance metallization terminations
US7376408B2 · kind B2 · utility
50Cited by
10References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 10, 2004 |
| Grant date | May 20, 2008 |
| Priority date | — |
| Expiry date | Apr 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10446
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention uses metallization termination techniques to reduce the electro-magnetic field scattering at the edges of metallized areas. The metallization termination techniques provide a gradual transition from high conductivity areas to high impedance areas. The mobile phone antenna illuminates the PCB allowing currents to flow on the PCB. When the currents reach edges of the PCB they flow through a region of increasingly high impedance without reflecting back or scattering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.