System and method for the identification of chemical mechanical planarization defects
US7377170B2 · kind B2 · utility
3Cited by
12References
20Claims
0Family size
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Key dates
| Filing date | Oct 31, 2006 |
| Grant date | May 27, 2008 |
| Priority date | — |
| Expiry date | Nov 28, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2291/2697
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention presents a novel application of a wavelet-based multiscale method in a nanomachining process chemical mechanical planarization (CMP) of wafer fabrication. The invention involves identification of delamination defects of low-k dielectric layers by analyzing the nonstationary acoustic emission (AE) signal collected during copper damascene (Cu-low k) CMP processes. An offline strategy and a moving window-based strategy for online implementation of the wavelet monitoring approach are developed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.