Object processing apparatus and plasma facility comprising the same
US7378062B2 · kind B2 · utility
9Cited by
5References
21Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | May 28, 2001 |
| Grant date | May 27, 2008 |
| Priority date | — |
| Expiry date | Apr 29, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02C20/30
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A processing apparatus for subject of the present invention uses a high voltage electrode and a ground electrode, and generates plasma under atmospheric pressure in a reaction passage through which a to-be-processed subject passes. For example, even fluorocompound such as PFC including CF4 can effectively be decomposed because the fluorocompound is brought into contact with plasma in a small space for sufficient time, and the apparatus has a small and simple structure. Therefore, the apparatus can be added to each process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.