Method of fabricating thin film transistor
US7378303B2 · kind B2 · utility
2Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2006 |
| Grant date | May 27, 2008 |
| Priority date | — |
| Expiry date | Jan 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
Abstract
A method for fabricating a thin film transistor is provided. A conductive layer is formed on a substrate. A patterned mask is formed on the conductive layer to cover a predetermined thin film transistor (TFT) area, and at least one portion of the conductive layer exposed by the patterned mask are removed. A laser is applied to form a laser hole in the patterned mask to expose a portion of the conductive layer and the laser hole substantially corresponds to a channel region of the predetermined TFT area. The exposed conductive layer is etched to form source and drain electrodes on opposite sides of the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.