Semiconductor device and manufacturing method thereof
US7378325B2 · kind B2 · utility
20Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 2006 |
| Grant date | May 27, 2008 |
| Priority date | — |
| Expiry date | May 23, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/177
Abstract
A high voltage semiconductor device having a high current gain hFE is formed with a collector region (20) of a first conduction type, an emitter region (40) of the first conduction type, and a base region (30) of a second conduction type opposite to the first conduction type located between the collector region and the emitter region. The free carrier density of the base region (30) where no depletion layer is formed is smaller than the space charge density of a depletion layer formed in the base region (30).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.