Ridge waveguide device surface passivation by epitaxial regrowth
US7378681B2 · kind B2 · utility
1Cited by
12References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 12, 2003 |
| Grant date | May 27, 2008 |
| Priority date | — |
| Expiry date | Mar 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for reducing surface recombination in an area next to a mesa in devices containing active and passive sections. This is obtained by growing, by metalorganic vapor phase epitaxy (MOVPE), a thin epitaxial layer of material with larger bandgap than a waveguide material and preferably smaller surface recombination rate than the waveguide material. This thin layer is preferably non-intentionally doped to avoid creating a surface leakage path, thin enough to allow for carrier to diffuse to and thermalize in the waveguide layer and thick enough to prevent carriers to tunnel through it.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.