Solid-state image sensor
US7378691B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2006 |
| Grant date | May 27, 2008 |
| Priority date | — |
| Expiry date | Jul 31, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80
Abstract
A solid-state image sensor capable of suppressing blooming and increase of a dark current also when an n-type impurity concentration in a transfer channel region is increased is obtained. In this solid-state image sensor, gate electrodes of a prescribed pixel and another pixel adjacent to the prescribed pixel are provided at a first space, and a larger quantity of second conductivity type impurity is introduced into a region of a first conductivity type transfer channel region, located on the main surface of a substrate, corresponding to the first space as compared with a second conductivity type impurity contained in the remaining region of the transfer channel region other than the region corresponding to the first space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.