Wideband ultra low noise amplifier
US7378911B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2006 |
| Grant date | May 27, 2008 |
| Priority date | — |
| Expiry date | Jul 23, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/72
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A circuit and method of reducing noise in the circuit comprises a first transistor and an amplifier operatively connected to the first transistor, wherein the amplifier comprises a plurality of transistors and is adapted to amplify an input signal, and wherein the input signal is differentially captured at an output of the first transistor and the amplifier. Preferably, the plurality of transistors comprises a second transistor and a third transistor. Furthermore, a noise level of the first transistor and the third transistor are preferably cancelled. The size of the second transistor may be approximately 1/50Ω. Preferably, a gain on an amplifier stage formed by the second transistor and the third transistor is adapted to be increased. Moreover, an equivalent transconductance of the amplifier is preferably independent of an impedance matching on the amplifier. Preferably, a noise figure level of the circuit is less than approximately 1 dB.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.