Large-capacity magnetic memory using carbon nano-tube
US7379326B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2003 |
| Grant date | May 27, 2008 |
| Priority date | — |
| Expiry date | Feb 1, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/865
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A high-capacity magnetic memory capable of writing and reading a magnetic record in/from a magnetic recording film according to a perpendicular magnetic recording system at a high speed in a purely-electrically random access manner. In the magnetic memory, a writing-magnetic-field generating means 62 and a writing word line 43 are disposed relative to a perpendicular magnetic recording film 50, and a reading/writing bit-line conductor 41, a magnetoresistive-effect element 20 and a reading word lead conductor 42 are laminated in order on a probe substrate opposed to the perpendicular magnetic recording film 50. A magnetic probe 30 composed of a carbon nanotube containing a soft magnetic material is disposed relative to the magnetoresistive-effect element 20 in a standing manner, and electrically connected to the reading/writing bit-line conductor. During a writing operation, a micro-discharge is generated in a micro-gap G between the edge of the magnetic probe and the magnetic recording film under a writing magnetic field to allow a writing current to flow through the micro-gap G so as to heat a micro-region of the magnetic recording film in such a manner that it goes through its Cu…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.