Magnetic head coil system and damascene/reactive ion etching method for manufacturing the same

US7380332B2 · kind B2 · utility

Assignee

• Hitachi Global Storage Technologies Netherlands B.V. · NL

Inventors

• Daniel Wayne Bedell · San Jose, US
• Richard Hsiao · San Jose, US
• James Jarratt · San Jose, US
• Patrick Rush Webb · San Jose, US
• Sue Siyang Zhang · Saratoga, US

Key dates

• Filing date: Jan 20, 2005
• Grant date: Jun 3, 2008
• Expiry date: Jul 21, 2026

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T29/49073
• WIPO field: Audio-visual technology
• WIPO sector: Electrical engineering

Abstract

A system and method are provided for manufacturing a coil structure for a magnetic head. Initially, an insulating layer is deposited with a photoresist layer deposited on the insulating layer. Moreover, a silicon dielectric layer is deposited on the photoresist layer as a hard mask. The silicon dielectric layer is then masked. A plurality of channels is subsequently formed in the silicon dielectric layer using reactive ion etching (i.e. CF4/CHF3). The silicon dielectric layer is then used as a hard mask to transfer the channel pattern in the photoresist layer using reactive ion etching with, for example, H2/N2/CH3F/C2H4 reducing chemistry. To obtain an optimal channel profile with the desired high aspect ratio, channel formation includes a first segment defining a first angle and a second segment defining a second angle. Thereafter, a conductive seed layer is deposited in the channels and the channels are filled with a conductive material to define a coil structure. Chemical-mechanical polishing may then be used to planarize the conductive material.