Porogens for porous silica dielectric for integral circuit applications
US7381442B2 · kind B2 · utility
3Cited by
9References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2002 |
| Grant date | Jun 3, 2008 |
| Priority date | — |
| Expiry date | Feb 8, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/249953
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to the production of nanoporous silica dielectric films and to semiconductor devices and integrated circuits comprising these improved films. The nanoporous films of the invention are prepared using silicon containing pre-polymers and are prepared by a process that allows crosslinking at lowered gel temperatures by means of a metal-ion-free onium or nucleophile catalyst.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.