Semiconductor integrated circuit device
US7381998B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2004 |
| Grant date | Jun 3, 2008 |
| Priority date | — |
| Expiry date | Jul 8, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/611
Abstract
A semiconductor integrated circuit device according to the present invention includes a diode in a second island region. The anode region of the diode and the dividing region in a first island region having a horizontal PNP transistor are electrically connected to each other; the cathode region of the diode and the collector region of a power NPN transistor are electrically connected to each other. Accordingly, the dividing region in the first island region having a horizontal PNP transistor becomes lower in potential than the dividing regions in the other island regions, so that the inflow of free carriers (electrons) to the horizontal PNP transistor can be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.