Workfunction-adjusted thyristor-based memory device
US7381999B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 21, 2005 |
| Grant date | Jun 3, 2008 |
| Priority date | — |
| Expiry date | Jul 10, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B99/22
Abstract
A memory device having a thyristor-based storage element and an access device coupled to the thyristor-based storage element at a common storage node is described. The thyristor-based storage element has a first gate stack, where the first gate stack has a first workfunction configured to a base region of the thyristor-based storage element. The access device has a second gate stack, where the second gate stack has a second workfunction. The first gate stack includes a first conductive layer formed over a gate dielectric and a second conductive layer formed over the first conductive layer. The second gate stack includes the second conductive layer formed over the gate dielectric. The first workfunction is operationally distinct from the second workfunction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.