Dielectric thin film, dielectric thin film device, and method of production thereof
US7382013B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2005 |
| Grant date | Jun 3, 2008 |
| Priority date | — |
| Expiry date | Sep 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02323
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a dielectric thin with a high dielectric constant, a low leakage current, and stable physical properties and electrical properties and to provide a thin film capacitor or other thin film dielectric device with a high capacitance and high reliability and a method of production of the same, a dielectric thin film containing oxides such as barium strontium titanate expressed by the formula (BaxSr(1-x))aTiO3 (0.5<x≦1.0, 0.96<a≦1.00) and having a thickness of not more than 500 nm and a method of production of a thin film dielectric device including a step of annealing the dielectric thin film in an atmosphere of an oxidizing gas after forming a dielectric thin film on a conductive electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.